Apparatus and methods for de-embedding through substrate vias

ABSTRACT

A method includes providing on a substrate having at least two through substrate vias (“TSVs”) a plurality of test structures for de-embedding the measurement of the intrinsic characteristics of a device under test (DUT) including at least two of the TSVs; measuring the intrinsic characteristics [L] for a first and a second test structure on the substrate including two pads coupled with a transmission line of length L; using simultaneous solutions of ABCD matrix or T matrix form equations, and the measured intrinsic characteristics, solving for the intrinsic characteristics of the pads and the transmission lines; de-embedding the measurements of the third and fourth test structures using the intrinsic characteristics of the pads and the transmission lines; and using simultaneous solutions of ABCD matrix or T matrix form equations for BM_L and BM_LX, and the measured intrinsic characteristics, solving for the intrinsic characteristics of the TSVs.

BACKGROUND

A common requirement of current integrated circuit manufacturing andpackaging is the use of interposers to receive single or multipleintegrated circuit dies. Recently, the use of three-dimensional IC(“3DIC”) packaging is increasing; and this vertically oriented approachrequires stacking. Stacking of devices requires forming verticalconnections between devices. The use of through vias or throughsubstrate vias (“TSVs”) extending through the interposers isincreasingly used with 3DIC assemblies. These through vias allowelectrical coupling between integrated circuit dies and componentsmounted on one side of an interposer, and terminals such as solder ballsmounted on the opposite side of the interposer. Further, the use of TSVtechnologies with silicon interposer substrates enable wafer levelprocessing (“WLP”) of the interposer assemblies. This technique isincreasingly applicable to increasing memory or storage device density,for example, or increasing system complexity without added circuit boardarea. As demand for hand held and portable devices such as smart phonesand tablet computers increases, board area and board size restrictionsalso increases, and the use of the interposer assemblies and TSVs canhelp meet these requirements. Vertically stacking of components usingTSV technologies in 3DIC assemblies is increasingly used in developingadvanced integrated systems.

Testing or qualification of TSVs and bumps or microbumps on interposersprovide additional challenges. The resistance (“R”) of a single TSV isvery small and measurements are therefore difficult. Similar challengesexist with respect to the inductance (“L”) and capacitance (“C”) of theTSVs.

A continuing need thus exists for methods and apparatus to efficientlyperform de-embedding of parasitics for TSVs without the problemsexperienced when using the known methods.

BRIEF DESCRIPTION OF THE FIGURES

For a more complete understanding of the present embodiments, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 depicts in a cross-section an interposer and TSV structures;

FIG. 2 depicts in a cross-section two TSVs coupled together for ameasurement;

FIG. 3 depicts in a plan view a test structure embodiment;

FIG. 4 depicts in a cross-section a portion of the structure of FIG. 3;

FIG. 5 depicts in a plan view a dummy structure;

FIG. 6 depicts in a plan view another embodiment structure;

FIG. 7 depicts a simple circuit model for the structure of FIG. 6;

FIG. 8 depicts a flow diagram for a method embodiment;

FIG. 9 depicts a flow diagram for another method embodiment;

FIG. 10 depicts in a cross-section an embodiment with de-embeddingshown;

FIG. 11 depicts a pair of test structures for use with an embodiment;

FIG. 12 depicts a resistance plot obtained with an embodiment;

FIG. 13 depicts a cross-section of another structure depictingde-embedding;

FIG. 14 depicts in a plan view test structures for use with anembodiment; and

FIG. 15 depicts in a flow diagram a method embodiment.

The drawings, schematics and diagrams are illustrative and not intendedto be limiting, but are examples of embodiments of the invention, aresimplified for explanatory purposes, and are not drawn to scale.

DETAILED DESCRIPTION

The making and using of the embodiments are discussed in detail below.It should be appreciated, however, that the embodiments provide manyapplicable inventive concepts that can be embodied in a wide variety ofspecific contexts. The specific embodiments discussed are merelyillustrative of specific ways to make and use the embodiments, and donot limit the scope of the embodiments or the claims.

Embodiments of the present application which are now described in detailprovide novel methods and apparatus embodiments for performinginterposer TSV and bump measurements with parasitics de-embedded usingonly a few measurements at test, and with a minimum number of dummystructures. The measurements can be used to calibrate TSV models forsimulation and engineering work, and to qualify the finished TSV orbumps on the interposers. The embodiments require very few devices undertest (“DUTs”) to provide accurate results for the wafer, saving costsover direct measurements at a wafer acceptance test (“WAT”) point. Theembodiments are computationally efficient and results are quicklyobtained.

The methods are not limited to TSV and may be advantageously used toprovide de-embedding measurements for paths that include bumps,microbumps, solder columns and the like; all connections commonly usedin 3DIC assemblies where access to individual devices is limited, thephysical quantities measured are quite small, such as RLC for TSVs,bumps, or small connectors, and the use of WAT approaches is timeconsuming and costly, increasing the need for accurate modeling andqualification using fewer measurements.

FIG. 1 depicts in a cross-sectional view an example assembly 11 whichuses a TSV interposer 13. This example is presented merely to illustratehow TSV interposers may be used with integrated circuits and is notlimiting on the embodiments or the claims.

In FIG. 1, the interposer is a substrate which may be a semiconductorwafer or other substrate material used in integrated circuittechnologies, such as BT resin, PC board, ceramic, glass, epoxy resin orother substrate material. In many applications silicon wafers are usedas the substrate, which has the advantage of enabling the use ofsemiconductor process tools such as etchers, photolithography, moldingmachines and the like in a wafer level processing (“WLP”) approach.However the embodiments are not limited to any particular substratematerial.

TSVs 15 and 16 are shown extending from an upper surface of thesubstrate through the substrate 13. TSVs 15 are filled vias. To formthese, holes are formed in a thicker substrate, using for example,reactive ion etch (“RIE”) or deep RIE equipment on a semiconductorwafer. The vias are “blind vias”, that is they extend from one surfaceinto the substrate. After the etch, electroless or electroplatingprocesses are used to fill the vias with a conductor. Copper may beused, or other conductors used in semiconductor processes such asaluminum, copper alloys, aluminum alloys and the like. A barrierdielectric 19 isolates the conductor within the vias 15, 16 from thesubstrate, and this dielectric, typically an oxide such a SiO2, althoughother oxides, nitrides and dielectrics are sometimes used, provides aninsulator and a diffusion barrier. The via then forms a capacitance withthe substrate, Cox.

Backside operations that thin the substrate 13 may be used to expose thebottom of vias 15, 16 to complete the vias. A passivation or polyimidelayer 23 may be applied and additional conductive material may be usedto form contacts to the vias 15 for coupling the backside metal 25 tothe vias.

A top metal layer 17 overlies the upper portion of the vias 15, 16. Inan application, this may be the “die side” of the finished interposerand integrated circuit devices (not shown) may be mounted over apassivation layer 21 and coupled electrically to the substrate usingmicrobumps, solder bumps, solder balls or columns; for example. Wirebonds also could be used. The top metal layer may be a metal 1 materialsuch as copper, aluminum, polysilicon, or other conductive material.Barrier layers, diffusion barriers, and coatings could be used. Alloysand platings such as nickel, gold, palladium, titanium, tantalum couldbe used to improve the adhesion, reduce diffusion, or provideanti-reflective coatings as is known in the art.

A backside metal layer 25 is also formed over the dielectric orpassivation layer 23. This layer may provide a common terminal for somestructures as described below, although that is not necessary for theembodiments. This layer may form the “board side” or “solder ball side”of a finished interposer and may receive solder balls or solder columns(not shown) for mounting the finished interposer assembly 13 to anotherwafer or a circuit board to form a 3DIC system.

Substrate 13 may be a through interposer stack substrate, which is freefrom transistors. Alternatively, substrate 13 may be a throughtransistor stack substrate and may include active integrated circuits.Each of these types of substrates has specific requirements andcharacteristics as are described below.

FIG. 2 depicts in cross-section a portion of a device under test “DUT”31 and illustrates the requirements for de-embedding. In order tomeasure the intrinsic characteristics of a TSV 15, the RF GSG probes maybe placed on two pads,

Substrate 13 is typically quite thin, and may be from 10-100 microns ormore in thickness. Because the TSVs are small, the intrinsiccharacteristics are so small as to make measurements difficult. The TSVsmay have high aspect ratios, and small diameters. The diameter is notlimited but could be as small as 5-15 microns, with a thickness of20-100 microns. The conductive material is low in resistance and so theR value for the TSVs is quite small. For example, one illustrativeapplication has TSVs with R values as low as 38 milliohms, andinductance (L) as low as 77.8 picohenrys (pH) These quantities makeaccurate measurements by wafer probe very difficult, even using probesthat are RF ground signal ground (“GSG”) probes.

FIG. 2 is a simplified structure that further illustrates in an examplea measurement on a DUT. In FIG. 2, the TSVs 15 and 16 are coupled withbackside metal 25 to form an example test structure. Probes P1 and P2are placed on pads 29 and a signal path is formed through a first pad, atop metal trace 27, a first metal 17, the TSV 15, backside metal 25, asecond TSV 16, a second first metal portion 17, a second top metal trace27 and a second pad 29.

In taking, for example, a resistance measurement, the measurementbetween P1 and P2 would include parasitics for the two pads 29, the twotraces 27. The contribution of these elements, including characteristicsof the probe pins themselves which also contribute to the observed Rvalue, must be removed or “de-embedded” to get the intrinsiccharacteristic for the test device.

In order to make better measurements of such small quantities as a TSVresistance or impedance, it might be necessary to measure a larger valueand subtract a value for a dummy structure, for example, to reach thevalue for the smaller element.

This approach is now used in an embodiment to measure characteristicsfor TSV. The substrate has no active devices and is electricallyfloating at the wafer probe, which may impact the types of measurementsmade.

In FIG. 3, a top view of a test structure 41 is shown. In this view, TSV16 is the center portion, and has a portion 43 of a first metal layeroverlying it. TSVs 15 are shown formed in a ring around the center TSV16 and are coupled together by a portion 45 of the first metal layer.Pads 47 are coupled to the ring for receiving ground probes in a GSGprobe operation.

In FIG. 4 a cross-section is provided that illustrates the bottom metalportion 25 of the structure of FIG. 3. TSV 16 is shown with two TSVs 15on either side, and the first metal portions 43 and 45 are shownoverlying the respective TSVs. The bottom metal 25 couples thisstructure together, all of the TSVs are coupled to the bottom metal. Apath from portion 43 through the TSV 16, into the bottom metal 25, andback through the TSVs 14 to portion 45, is thus formed as a teststructure.

Measuring the intrinsic characteristics of a single TSV such as TSV 16is, as described above, difficult for several reasons. The actualphysical values of the intrinsic characteristics of the TSV are quitelow, which makes the measurement difficult. Further, the TSV measurementincludes traces, pads and probes which have to be de-embedded.

One method to increase accuracy of measuring a small resistance, forexample a TSV, is to measure a test structure that includes thatresistance with others, and then, remove the extra resistancemathematically. In this way the resistance or other quantity measuredwill be sufficiently large to enable an accurate measurement. Thestructure of FIGS. 3 and 4 enables such a measurement from a signal pad43 in the central portion of Figure to the ground pads 47.

FIG. 5 depicts in a top view a dummy structure 50 that can be used withthe structures of FIGS. 3 and 4 to complete the resistance measurement.By forming a dummy structure that is equivalent to the backside metal 25in FIG. 4, and measuring the intrinsic characteristics, for example theresistance, this value may be subtracted from the resistance valuemeasured for the overall test structure, and the value for the singleTSV or multiple TSVs can be determined. In FIG. 5, the backside metal 26is designed to be the equivalent of the backside metal 25 in FIG. 4. Thepads 48 and 49 are provided and a GSG probe can be used to measure theintrinsic characteristics of the dummy structure. This gives a valuethat can be subtracted to get the values for the TSVs in FIGS. 3 and 4.

FIG. 6 depicts in a plan view a structure for measuring the capacitanceCox due to the sidewall liner for a TSV such as 16. A bias such as apositive voltage PLUS is placed on TSV 16, for example. The surroundingTSVs are biased to a negative voltage MINUS for example. Each TSV 15 or16 has a sidewall liner 20 formed of a dielectric and thus, a capacitoris formed between the TSV and the substrate 13.

FIG. 7 depicts a simplified circuit diagram to explain a methodembodiment for obtaining the capacitance value Cox. The substrate 13 isfloating in this arrangement, and a backside metal 25 couples the TSVstogether at one end. Thus the simplified circuit diagram in FIG. 7illustrates how the TSV 16 forms a first capacitor in series with thecapacitors of the parallel capacitors for TSV 15. The total measuredcapacitance will be, for a case of 3 TSVs 15, given by the relation inEquation 1:Ctotal=Cox in series parallel with 3Cox,=¾Cox.  (Equation 1)

This can be extended to the general case of 1 series TSV via coupledwith “n” parallel TSVs, as:Ctotal=n/(n+1)*Cox.  (Equation 2)

Thus, if n is greater than 30, for example, Ctotal is 0.97 Cox, and asmore surrounding TSVs are added to the measurement, the equation forCtotal approaches Cox.

By using this relation and measuring Ctotal in the structure of FIG. 6,the value for Cox is obtained from the total capacitance, so long as thenumber of parallel TSVs surrounding the TSV such as 16 is sufficientlylarge.

FIG. 8 depicts in a flow chart a method embodiment for the abovemeasurement. In step 51, a first TSV is provided on a substrate, coupledto a backside metal, such as TSV 16 in FIG. 3. In step 53, this firstTSV is surrounded by additional TSVs coupled to the backside metal. Instep 55, a dummy structure is provided that is equivalent to thebackside metal. In step 57, a measurement is made through the first TSV,the backside metal, and through the surrounding TSVs in parallel. Instep 59 the dummy structure is measured. In step 61, the subtraction isperformed to extract the value (for example, resistance) for the firstTSV.

FIG. 9 depicts in a flow chart an alternative method for determining thecapacitance Cox using the structures described above. Some of the stepsare the same as those in FIG. 8 and like numerals are used. In step 51,the first TSV is provided on the substrate, coupled to a backside metal.In step 53, the surrounding TSVs are formed around the first TSV. Instep 65, a positive potential is applied to the first TSV. In step 67, anegative potential is applied to the surrounding TSVs. In step 69 ameasurement of the capacitance is made through for the path the firstTSV to the substrate and backside metal, and then through thesurrounding TSVs in parallel. In step 71, the capacitance Cox can becalculated. If the number n of surrounding TSVs is sufficiently large,the Cox is approximately given by Ctotal; otherwise the Cox capacitancecan be easily calculated.

FIG. 10 depicts in a cross-sectional view a device under test (DUT)structure for use in another embodiment. In FIG. 10, TSVs 15 and 16extend through substrate 13 and are coupled through a length of backsidemetal 25 having a length BM_L. First metal 27 forms traces that can beused for probing and measuring. As explained above, to get the intrinsiccharacteristics of the TSVs, a measurement on a path that includes thetraces 27 has to be “de-embedded” to remove the parasitic values.

Some of the inventors of this application previously filed U.S. patentapplication Ser. No. 12/042,606, entitled “De-Embedding Method forOn-Wafer Devices”; filed Mar. 5, 2008, which application is herebyincorporated in its entirety herein by reference. The patent applicationdescribes methods for de-embedding traces and pads from a device undertest (“DUT”) measurement. The methods of the above referenced patentwill be further extended by novel method embodiments directed at TSVstructures and methods, as described further below.

In FIG. 10, the traces 27 and any pads or probes that are in themeasurement path must be de-embedded. FIG. 11 depicts how a pair of teststructures can be used to provide the values needed for de-embeddingthese portions.

In FIG. 11 a first test structure 83 is shown. This structure includes atransmission line 89 and pads 87 at each end. Pads 85 are also providedfor grounding for the GSG probes. Similarly, test structure 93 isprovided. This structure provides a transmission line 99 that is, inthis example case, of length twice that of the transmission line 89.Pads 97, which are the same size and in the same metal layer as pads 87,are at each end.

A measurement of each pad-line-pad combination in the test structures:87-89-87, and 97-99-97; may be made using the RF GSG probe, for example.Using the ABCD matrix or T matrix form for transmission elements, theintrinsic characteristic measurements for line 89 can be expressed as:[L]=[PAD][Tline][PAD]  (Equation 3)[2L]=[PAD][Tline][Tline][PAD]  (Equation 4)

Thus since the quantities L and 2L are measured and known, the twovariable PAD and Tline can be obtained through matrix manipulations andsimultaneously solving the two equations, as:[PAD][PAD]=[[L] ⁻¹[2L][L] ⁻¹]⁻¹  (Equation 5)[Tline]=[PAD]⁻¹ [L][PAD]⁻¹  (Equation 6)

As the characteristics of PAD in Equation 5 are all measuredcharacteristics, the PAD matrix can be solved, and the Tlinecharacteristics are thus available from Equation 6. Thus by simplecalculation the values for [PAD] and the [Tline] may be obtained; andthese can be used to de-embed the parasitics from any measurements takenusing a trace that is the same as the Tline trace in the first metal.

A method for measuring the resistance of the TSVs in FIG. 10 is nowprovided. Because the trace and pad values can be de-embedded using thetest structures of FIG. 11 and Equations 5 and 6, a value for aresistance that includes the metal BM_L in FIG. 10 is easily obtained.By measuring test structures having different lengths of this bottommetal material, and de-embedding the pads and top metal traces for eachmeasurement, a plot of the resistance which includes a variableresistance proportional to the length of the BM_L portion, and the fixedresistance of 2 TSVs, can be made. Using extrapolation the value of theresistance of 2 TSVs (15 and 16 in FIG. 10, for example) is obtained.

FIG. 12 depicts an example of the results obtained using thisextrapolation technique. In FIG. 12, several resistance data points areshown plotted on the vertical axis for a measured resistance path havinga length BM_L from 20-100 ums, (length is on the horizontal axis) and aslope formula is extracted, which in this simple example isy=0.0308x+0.0944. That is, the value at length BM_L=0 is extrapolated as0.0944. This is the resistance for 2 TSVs so an extrapolated R value forone TSV would be 0.0472 ohms, or 47.2 milliohms. A measured value at WATwas 38 milliohms at DC. This DC WAT value shows the accuracy of theextrapolation method. The actual values of R for the TSVs is very low,however by measuring the test structure of two TSVs and the backsidemetal, the accuracy of the measurement is actually improved; and theextrapolated resistance value is very accurate.

As shown in FIG. 10, a partial de-embedding would remove the traces 27from the structure 81. FIG. 12 depicts the same structure showing thede-embedding needed (indicated by dashed lines) to remove the parasiticvalues from the intrinsic values for the TSVs. The bottom metal portion25 would also have to be de-embedded. Method embodiments are nowpresented for performing de-embedding to provide the intrinsiccharacteristics of the TSVs 15, 16 in FIG. 13.

In the method, additional test structures are provided that include 2TSVs coupled in series with a length of bottom metal 25. For example afirst one may have a length BM_L, and a second length may be X*BM_L,where X is >1. Note that in the above explanation of the test structuresof FIG. 11, X value of 2 was used (L, 2L) but this may be generalized toX, where X is >1; for example 1.5 may be used.

A new set of equations is obtained by substituting [TSV] for the [PAD]characteristics above, and [BM_L_Tline] for [Tline]; so these equationsare:[BM _(—) L]=[TSV][BM _(—) L _(—) Tline][TSV]  (Equation 7)[X*BM _(—) L]=[TSV][BM _(—) L _(—) Tline*X][TSV]  (Equation 8)

FIG. 14 illustrates in a top view of the TSV test structure 81 bothprior to, and after de-embedding of the PAD and Tline portions,indicated by the dashed areas. There will be two TSV devices under test,“DUTs”. Each will have different lengths for the BM_L 25, which willenable the use of the ABCD matrix or T matrix forms of the intrinsiccharacteristic in the equations above, and the two measurements then setup the simultaneous equation solutions described above for obtaining thede-embedded version of [TSV]; the intrinsic characteristics of the TSV.

Thus again the measured characteristics [BM_L] and [X*BM_L] are usedwith two equations and two variables, which can be manipulated andsolved. However, to obtain the two measured characteristics needed forequations 7 and 8, the two test structures such as 81, with twodifferent lengths for BM_L, are measured, and also the test structures85 and 95 of FIG. 11; for the top metal traces and pads, the values forPAD and Tline are obtained. These values are then used to de-embed themeasurements for the TSV test structures. Then, the two equations 7 and8 may be solved simultaneously and obtain the de-embedded values forTSV.

FIG. 14 illustrates in a top view of the TSV test structure 81 is shownin FIG. 14 both prior to, and after de-embedding of the PAD and Tlineportions, indicated by the dashed areas. There will be two devices undertest, DUTs. Each will have two different lengths for the BM_L 25, whichwill enable the use of the ABCD matrix or T matrix forms of theintrinsic characteristic in the equations above, and the twomeasurements sets up the simultaneous equation solutions described abovefor obtaining the de-embedded version of [TSV]; the intrinsiccharacteristics of the TSV.

FIG. 15 depicts in a flow chart a method embodiment for performing theabove de-embedding methods. In step 101, two test structures areprovided each having two pads and a transmission line, one transmissionline of length L, and one of length X*L, where X>1, for example, in theillustration in FIG. 11 above, X was 2.

In step 103, two TSV test structures are provided. Each has two pads,two transmission lines, two TSVs and a metal line (bottom metal portion25 for example in FIG. 13) of length BM_L in the first test structure,and BM_L*X in the second structure.

In step 105 a first pair of measurements of intrinsic characteristics ismade, using the first pair of test structures, and for example an RFwafer probe using a GSG set up. Other frequencies such as 200 Mhz can beused for example, or DC, so long as the measurements are consistent.

In step 107, a first equation pair is formed for the first two teststructures and using the ABCD matrix or T matrix manipulations, theequations are solved for the intrinsic characteristics of the pads andthe transmission lines.

In step 109, the two TSV structures are measured for the intrinsiccharacteristics, however these measurements include the pad andtransmission lines needed to couple the probes to the test structures.

In step 111, the pad and transmission line values are used to de-embedthe measurements of the test structures for the TSVs.

In step 113, the two equations in ABCD form are set up for the TSV teststructures, and using the de-embedded measurements, these are solved forthe de-embedded intrinsic values for the TSVs.

The methods above for the test structures and TSV test structures assumea grounded substrate is used in the measurements. This is typically truewhen there are active devices on the substrate. However, it may not betrue when the substrate is an interposer without active devices. In thiscase, the substrate may float. A floating substrate will couple to othersignal lines, as is known, by capacitive and inductive coupling. Thusextra shielding between the pads and the substrate, or the backsidemetal and the substrate, may be required in these cases. The parasiticcapacitor between the interposer substrate and shielding shall be largerthan 5 pH, which may combine with MIM capacitor or MOM capacitor, tomake little influence to DUT, which is TSV, as mentioned.

An apparatus embodiment is provided, comprising a substrate comprisingat least two or more through substrate vias (“TSVs”); a plurality oftest structures for de-embedding parasitics from a device under testpath including at least two of the at least two or more TSVs and atleast two pads, the plurality of test structures further comprising afirst transmission line test structure of length L and a first pair ofpads, the pads coupling to either end of the first transmission linetest structure; a second transmission line test structure of length L*X,where X is greater than 1, and a second pair of pads, the pads couplingto either end of the second transmission line; a first TSV teststructure comprising two TSVs coupled by a first metal line of length L,the TSVs coupled to either end of the metal line; and a second TSV teststructure comprising two TSVs coupled by a second metal line of lengthL*X.

A method embodiment is provided, comprising providing on a substratehaving at least two through substrate vias (“TSVs”) a plurality of teststructures for de-embedding the measurement of the intrinsiccharacteristics of a device under test (DUT) including at least two ofthe TSVs; measuring the intrinsic characteristics [L] for a first teststructure on the substrate including two pads coupled with atransmission line of length L; measuring the intrinsic characteristics[LX] of a second test structure on the substrate including two padscoupled with a transmission line of length L*X, where X is greater than1; measuring the intrinsic characteristics [BM_L] of a third teststructure on the substrate including a first metal line of length [L]and at least two TSVs; measuring the intrinsic characteristics [BM_LX]of a fourth test structure on the substrate including a second metalline of length L*X and at least two TSVs; using simultaneous solutionsof ABCD matrix or T matrix form equations for L and LX, and the measuredintrinsic characteristics, solving for the intrinsic characteristics ofthe pads and the transmission lines; de-embedding the measured intrinsiccharacteristics of the third and fourth test structures; and usingsimultaneous solutions of ABCD matrix or T matrix form equations forBM_L and BM_LX, and the measured intrinsic characteristics, solving forthe intrinsic characteristics of the TSVs and the metal lines.

In yet another method embodiment, a method comprises providing a throughsubstrate via (TSV) device under test extending through and disposed ona substrate; providing a plurality of surrounding TSVs around the deviceunder test on the substrate; coupling a signal to the TSV device undertest on a front side of the substrate; providing a back side metalcoupling the TSV device under test and the surrounding TSVs at the backside of the substrate; providing a dummy structure equal in area to theback side metal area of the back side metal; supplying a signal to TSVdevice under test; and receiving the signal through the surrounding TSVscoupled in parallel.

The scope of the present application is not intended to be limited tothe particular illustrative embodiments of the structures, methods andsteps described in the specification. As one of ordinary skill in theart will readily appreciate from the disclosure of the presentinvention, processes, or steps, presently existing or later to bedeveloped, that perform substantially the same function or achievesubstantially the same result as the corresponding embodiments describedherein may be utilized according to the present invention. Accordingly,the appended claims are intended to include within their scope suchprocesses or steps.

What is claimed is:
 1. A method, comprising: providing a through substrate via (“TSV”) device under test extending through and disposed on a substrate; providing a plurality of surrounding TSVs around the device under test on the substrate; coupling a signal to the TSV device under test on a front side of the substrate; providing a back side metal coupling the TSV device under test and the surrounding TSVs at the back side of the substrate; providing a dummy structure equal in area to the back side metal area of the back side metal; supplying a signal to TSV device under test; and receiving the signal through the surrounding TSVs coupled in parallel.
 2. The method of claim 1, wherein a resistance of the TSV device under test is determined by making a measurement of the resistance of the signal through the TSV device under test, the backside metal, and the surrounding TSVs; and subtracting the resistance due to the dummy structure.
 3. The method of claim 1, wherein the TSV device under test and the surrounding TSVs each are lined with a dielectric and each forms a capacitance from TSV to substrate and the capacitance is further measured by: coupling a positive voltage bias to the TSV device under test; coupling a negative voltage bias to the surrounding TSVs in parallel; and measuring the total capacitance, the capacitance for the TSV device under test approximately equal to the total capacitance when the number of surrounding TSVs is greater than
 10. 4. The method of claim 1 wherein the substrate is floating.
 5. The method of claim 4, further comprising providing a MOM or MIM capacitor between the TSV device under test and the substrate.
 6. A method, comprising: providing on a substrate having at least two through substrate vias (“TSVs”) a plurality of test structures for de-embedding the measurement of the intrinsic characteristics of a device under test (DUT) including at least two of the TSVs; measuring the intrinsic characteristics [L] for a first test structure on the substrate including two pads coupled with a transmission line of length L; measuring the intrinsic characteristics [LX] of a second test structure on the substrate including two pads coupled with a transmission line of length L*X, where X is greater than 1; measuring the intrinsic characteristics [BM_L] of a third test structure on the substrate including a first metal line of length [L] and at least two TSVs; measuring the intrinsic characteristics [BM_LX] of a fourth test structure on the substrate including a second metal line of length L*X and at least two TSVs; using simultaneous solutions of ABCD matrix or T matrix form equations for L and LX, and the measured intrinsic characteristics, solving for the intrinsic characteristics of the pads and the transmission lines; de-embedding the measurements of the third and fourth test structures using the intrinsic characteristics of the pads and the transmission lines; and using simultaneous solutions of ABCD matrix or T matrix form equations for BM_L and BM_LX, and the measured intrinsic characteristics, solving for the intrinsic characteristics of the TSVs and the metal lines.
 7. The method of claim 6, wherein the intrinsic characteristics of the pads and the transmission lines are used to de-embed the parasitic values from a resistance measurement of two TSVs and a metal line; and extrapolation is used to determine the resistance of two TSVs.
 8. The method of claim 7, and further comprising: measuring the intrinsic characteristics of a device under test comprising a first pad coupled by a first transmission line on a first surface of the substrate to a first TSV, a metal line formed on a second opposite surface of the substrate, a second TSV, a second transmission line formed on the first surface of the substrate, and a second pad; and de-embedding the parasitic values due to the first pad, the first transmission line, the second pad, the second transmission line, and the metal line, to extract the intrinsic characteristics of the two TSVs.
 9. The method of claim 7, wherein measuring the intrinsic characteristics comprises performing a ground signal ground RF probe at a wafer test station.
 10. The method of claim 7, wherein providing a substrate further comprises providing a substrate including active transistor devices formed upon the substrate.
 11. The method of claim 7, wherein providing a substrate further comprises providing an interposer substrate free from active transistor devices. 